Evoluzione dei chip: TSMC al lavoro su tre processi a 3 nm per arrivare a usare transistor GAAFET entro il 2025
3nm in Samsung Plans for 2021 - EE Times Asia
3nm GAA MBCFET™: Unrivaled SRAM Design Flexibility | Samsung Semiconductor EMEA
7nm, 5nm, 3nm: The new materials and transistors that will take us to the limits of Moore's law | Extremetech
TSMC inizia la produzione di massa di chip a 3 nm. E il CEO rassicura il governo di Taiwan sul futuro | DDay.it
Where are my GAA-FETs? TSMC to Stay with FinFET for 3nm
Transistor Options Beyond 3nm
Transistors Reach Tipping Point At 3nm
Samsung's 3-nm Tech Shows Nanosheet Transistor Advantage - IEEE Spectrum
Nel 2022 arriverà il processo produttivo a 3 nm di TSMC
Success in operation of transistor with channel length of 3 nm
Transistor Options Beyond 3nm
TSMC 3nm FinFlex + Self-Aligned Contacts, Intel EMIB 3 + Foveros Direct, AMD Yield Issues, IBM Vertical Transport FET (VTFET) + RU Interconnects, CFET, Sequential Stacking, Samsung Yield, and more
3nm Technology - Taiwan Semiconductor Manufacturing Company Limited
Fin field-effect transistor - Wikipedia
TSMC upends 3-nm roadmap with three new nodes - EDN
Samsung: 3 nanometri e transistor GAAFET ormai ai nastri di partenza | Hardware Upgrade
China Reports Breakthrough in Developing 3nm Transistors
TSMC 3nm: 250 milioni di transistor per mm2 - ItaliaSmartphoneReview
Samsung's June 2023 Reveal: Enhanced 3nm & 4nm Chip Fabrication Process
1: n-channel UFET Transistors for the 3nm node | Download Scientific Diagram
What are the pros and cons of a 3nm processor? - Quora
Samsung abbandonerà la tecnologia FinFET per realizzare i primi transistor a 3 nm
